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<?xml encoding="utf-8" ?> pMTJ STT-MRAM developer Avalanche Technology launched two new densities of its 3rd generation space-grade parallel asynchronous x32-interface high-reliability P-SRAM (Persist...
<?xml encoding="utf-8" ?> Researchers from Northwestern University, led by Prof. Pedram Khalili, report the first all-antiferromagnetic tunnel junction (ATJ) devices with both electrical switching and...
<?xml encoding="utf-8" ?> France-based Tiempro Secure announced that its TESIC RISC-V Secure Element was implemented in GlobalFoundries’ 22-nm platform with embedded MRAM, after a rigorous charact ...
<?xml encoding="utf-8" ?> Everspin Technologies announced that it has applied for the CHIPS Incentives Program, asing for funding for an additional 200mm MRAM production line. Everspin says the ne ...
<?xml encoding="utf-8" ?> Everspin Technologies reported its financial results for Q4 2023, with revenues of $16.7 million and a net income of $2 million. Product sales were a bit slower than last ...
<?xml encoding="utf-8" ?> Renesas Electronics announced that it has developed circuit technologies for embedded STT-MRAM that reduces the energy and voltage of the memory write operation. ...
<?xml encoding="utf-8" ?> Reports in Japan suggest that Taiwan's Powerchip Semiconductor Manufacturing (PSMC) will enter into a new MRAM R&D project, together with Japan's Power Spin. PSMC plans t ...
<?xml encoding="utf-8" ?> Researchers from Japan's Tohoku University developed a method to produce X nm MTJs, using a CoFeB/MgO stack structure. The researchers report that the extremely small dev ...
<?xml encoding="utf-8" ?> In 2022, Taiwan's Industrial Technology Research Institute (ITRI) announced an agreement with Taiwan Semiconductor Manufacturing Company (TSMC) to collaborate on SOT-MRAM ...
<?xml encoding="utf-8" ?> At the 2023 MRAM Forum, a key event by the IEEE Magnetics Society tied to the IEDM conference, Mr. Noh, Chief Technology Officer at Netsol, provided an overview of the co ...